High Performance Bipolar NPN RF Transistor
• High transducer gain of typ. 16 dB @ 13 mA, 5.5 • Low minimum noise figure of typ. 0.7 dB @ 5.5 GHz• High 3rd order intercept point of typ. 23 dBm @ 13 mA,5.5 GHz• Pb-free (RoHS compliant) package• For a wide range of non-automotive applications
NPN Silicon RF Transistor
• Low current device suitable e.g. for handhelds• For high frequency oscillators e.g. DRO for LNB• For ISM band applications like Automatic Meter Reading, Sensors etc.• Transit frequency f T = 25 GHz• Pb-free (RoHS compliant) package• Qualified according AEC Q101
Silicon PIN Diode
• For low loss RF switches and attenuators• Very low capacitance at zero volt reverse bias at frequencies above 1 GHz (typ. 0.25 pF)• Low forward resistance (typ. 1.5 Ω @ 5mA)• Low harmonics• Pb-free (RoHS compliant) package
Silicon RF Schottky Diodes
• Low barrier type for mixer applications up to 12 GHz, phase detectors and modulators• Pb-free (RoHS compliant) package
